Cu nanopaste for high density interconnect
(printable by gravure offset printing)

  • Electronics-related development products

  • R&D products

● Printable by gravure offset printing which enables fine-pitch trace down to L/S=7/12μm.
● < 10-5 Ω-cm order volume resistivity of at <150℃ by using formic acid reflow oven.

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Potential Applications

● Package substrate trace/Interposer trace/High density interconnect
● Package substrate bump/Interposer bump
● Display trace
● Electrodes of passive components

General Characteristics

 Test item Developed product
 Viscosity (Pa-s) 10 to 100
 Recommended curing conditions 150°C x 30 min in N2 + formic acid
 Volume resistivity (Ω-cm) 1.0 x 10-5
 Printing method Gravure offset, screen
 Storage conditions Refrigeration

*All values are representative.

Printability

● Gravure offset printing
Cooperation: Komori Corporation

▼φ15μm bumps printed by gravure offset printing

▼L/S=7/12μm copper traces printed by gravure offset printing

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