Cu nanopaste for high density interconnect
(printable by gravure offset printing)

  • Electronics-related development products

  • R&D products

 Printable by gravure offset printing which enables fine-pitch trace down to L/S=7/12μm.
 < 10-5 Ω-cm order volume resistivity of at <150℃ by using formic acid reflow oven.

0

Potential Applications

 Package substrate trace/Interposer trace/High density interconnect
 Package substrate bump/Interposer bump
 Display trace
 Electrodes of passive components

General Characteristics

 Test item Developed product
 Viscosity (Pa-s) 10 to 100
 Recommended curing conditions 150°C x 30 min in N2 + formic acid
 Volume resistivity (Ω-cm) 1.0 x 10-5
 Printing method Gravure offset, screen
 Storage conditions Refrigeration

*All values are representative.

Printability

 Gravure offset printing
Cooperation: Komori Corporation

▼φ15μm bumps printed by gravure offset printing

▼L/S=7/12μm copper traces printed by gravure offset printing

Product Inquiries